Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy
文献类型：期刊论文
| 作者 | Liu, XH(刘雪华); Zhang, JC(张纪才); Huang, J(黄俊); Yang, MM; Su, XJ(苏旭军); Ye, BB; Wang, JF(王建峰); Zhang, JP(张锦平); Xu, K(徐科) |
| 刊名 | MATERIALS EXPRESS
 |
| 出版日期 | 2016 |
| 卷号 | 6期号:4 |
| 通讯作者 | Zhang, JP(张锦平) ; Xu, K(徐科) |
| 英文摘要 | Controlling stress is a fundamental issue in thin film growth, and this problem becomes more complicated in AlN film growth due to low mobility of Al adatoms. To study the evolution of intrinsic stress distribution in the beginning of growth as a function of growth temperature, AlN films were grown directly on sapphire (0001) substrates at three different growth temperatures by hydride vapor phase epitaxy (HVPE). Transmission electron microscopy (TEM) demonstrated that the intrinsic stress distribution is periodic and the period increases with the increase of temperature. At lower growth temperature, the intrinsic stresses overlap with the dislocations during the initial growth, appearing as periodic nano-sized columns perpendicular to the AlN/sapphire interface when the sample is viewed with g = 11 (2) over bar0. In addition, the period is different along [1 (1) over bar 00] and [11 (2) over bar0] for a certain temperature. With the increase of growth temperature, a large fraction of misfit dislocations bend and terminate at around 1.5 mu m above the interface of AlN/sapphire forming a network. The periodicity of the stress distribution is thought to originate due to different mobilities of Al adatoms. This understanding helps to achieve stress-controllable AlN growth. |
| 关键词[WOS] | TRANSMISSION ELECTRON-MICROSCOPY ; ALN ; SAPPHIRE ; TEMPLATE ; FILM |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000386526600010 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4766]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Liu, XH,Zhang, JC,Huang, J,et al. Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy[J]. MATERIALS EXPRESS,2016,6(4). |
| APA | Liu, XH.,Zhang, JC.,Huang, J.,Yang, MM.,Su, XJ.,...&Xu, K.(2016).Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy.MATERIALS EXPRESS,6(4). |
| MLA | Liu, XH,et al."Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy".MATERIALS EXPRESS 6.4(2016). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。