Nucleation and growth of (10(1)over-bar1) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
文献类型：期刊论文
| 作者 | Liu, T(刘婷); Zhang, JC(张纪才); Su, XJ(苏旭军); Huang, J(黄俊); Wang, JF(王建峰); Xu, K(徐科) |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2016 |
| 卷号 | 6 |
| 通讯作者 | Zhang, JC(张纪才) ; Xu, K(徐科) |
| 英文摘要 | Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of (10 (1) over bar1) semi-polar AlN on (0001) AlN by constructing (10 (1) over bar1) and (10 (1) over bar1) twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN. |
| 关键词[WOS] | TWIN BOUNDARIES ; CRYSTAL ; NANOWIRES ; QUALITY ; DIODES ; PLANE |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000375979400002 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4775]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Liu, T,Zhang, JC,Su, XJ,et al. Nucleation and growth of (10(1)over-bar1) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy[J]. SCIENTIFIC REPORTS,2016,6. |
| APA | Liu, T,Zhang, JC,Su, XJ,Huang, J,Wang, JF,&Xu, K.(2016).Nucleation and growth of (10(1)over-bar1) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy.SCIENTIFIC REPORTS,6. |
| MLA | Liu, T,et al."Nucleation and growth of (10(1)over-bar1) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy".SCIENTIFIC REPORTS 6(2016). |
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