The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures
文献类型：期刊论文
| 作者 | Jahn, U; Musolino, M; Lahnemann, J; Dogan, P; Garrido, SF; Wang, JF; Xu, K(徐科); Cai, D; Bian, LF(边历峰); Gong, XJ(弓哓晶) |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2016 |
| 卷号 | 31期号:6 |
| 通讯作者 | Jahn, U |
| 英文摘要 | GaN several tens of mu m thick has been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates were covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in the cathodoluminescence images of the cross-section of the layers. These cathodoluminescence features provide an insight into the growth process. During a second high-temperature (high-T) step, the SFs disappear, and the luminescence of this part of the GaN layer is dominated by the donor-bound exciton. For templates consisting of both a thin AlN buffer and GaN nanostructures, the incorporation of silicon into the GaN grown by HVPE is not observed. Moreover, the growth mode of the (high-T) HVPE step depends on the specific structure of the AlN/GaN template, where in the first case, epitaxy is dominated by the formation of slowly growing facets, while in the second case, epitaxy proceeds directly along the c-axis. For templates without GaN nanostructures, cathodoluminescence spectra excited close to the Si/GaN interface show a broadening toward higher energies, indicating the incorporation of silicon at a high dopant level. |
| 关键词[WOS] | TEMPLATED (111)SI SUBSTRATE ; MOLECULAR-BEAM EPITAXY ; THICK GAN ; LATERAL OVERGROWTH ; GROWTH ; HVPE ; FILMS ; CATHODOLUMINESCENCE ; NANOHETEROEPITAXY ; CRYSTAL |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000378201000023 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4843]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Jahn, U,Musolino, M,Lahnemann, J,et al. The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2016,31(6). |
| APA | Jahn, U.,Musolino, M.,Lahnemann, J.,Dogan, P.,Garrido, SF.,...&Yang, H.(2016).The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,31(6). |
| MLA | Jahn, U,et al."The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 31.6(2016). |
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