The electrical properties of bulk GaN crystals grown by HVPE
文献类型：期刊论文
| 作者 | Gu, H(顾泓); Ren, GQ(任国强); Zhou, TF(周桃飞); Tian, FF(田飞飞); Xu, Y(徐俞); Zhang, YM(张育民); Wang, MY; Wang, JF(王建峰); Xu, K(徐科) |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2016 |
| 卷号 | 436 |
| 通讯作者 | Xu, K(徐科) |
| 英文摘要 | The electrical properties of high-quality bulk GaN crystals grown by Hydride Vapor Phase Epitaxy (HVPE) were investigated. The series of samples were sliced from the same bulk crystal grown by HVPE. The crystal quality of the samples was characterized by the cathode luminescence (CL) and high resolution X-ray diffraction measurements (HRXRD), the evaluated dislocation density ranges from 2.4 x 10(6) cm(-2) to 2.3 x 10(5) cm(-2). The temperature-dependent Hall measurements were conducted and the results were analyzed theoretically. The results suggest that with low dislocation density (<= 10(6) cm(-2)) and low carrier concentration (<= 10(17) cm(-3)), the impurity concentration should play an important role in the electrical properties. With the impurity concentration decreasing, the hall mobility increases from 619 to 1160 cm(2)/(V s), and the carrier concentration decreases from 5.42 x 10(16) cm(-3) to 1.31 x 10(16) cm(-3). (C) 2015 Elsevier B.V. All rights reserved. |
| 关键词[WOS] | VAPOR-PHASE-EPITAXY ; X-RAY-DIFFRACTION ; THREADING DISLOCATIONS ; SCATTERING ; SAPPHIRE ; MOBILITY ; DEFECTS ; LAYERS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000368244600012 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4876]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Gu, H,Ren, GQ,Zhou, TF,et al. The electrical properties of bulk GaN crystals grown by HVPE[J]. JOURNAL OF CRYSTAL GROWTH,2016,436. |
| APA | Gu, H.,Ren, GQ.,Zhou, TF.,Tian, FF.,Xu, Y.,...&Xu, K.(2016).The electrical properties of bulk GaN crystals grown by HVPE.JOURNAL OF CRYSTAL GROWTH,436. |
| MLA | Gu, H,et al."The electrical properties of bulk GaN crystals grown by HVPE".JOURNAL OF CRYSTAL GROWTH 436(2016). |
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