Photoinduced doping and photoluminescence signature in an exfoliated WS2 monolayer semiconductor
文献类型：期刊论文
| 作者 | Wang, XH; Ning, JQ(宁吉强); Su, ZC; Zheng, CC; Zhu, BR; Xie, L; Wu, HS; Xu, SJ |
| 刊名 | RSC ADVANCES
 |
| 出版日期 | 2016 |
| 卷号 | 6期号:33 |
| 通讯作者 | Xu, SJ |
| 英文摘要 | Following graphene, atomically thin two-dimensional transition metal dichalcogenides (2D-TMDs) are quickly emerging as a new multidisciplinary frontier across condensed matter physics, materials science and inorganic chemistry. Compared with graphene, the optical and optoelectronic properties of 2D-TMD materials are more attractive largely due to the nature of their direct band gap. In this article, we show an interesting demonstration of the photoinduced doping effect in a mechanically-exfoliated high-quality tungsten disulfide (WS2) monolayer semiconductor. By utilizing a focused laser beam and increasing its intensity, we successfully observed a photoinduced doping effect, indicated by the gradual tuning of dominant light emission from a single narrow emission band peaking at 2.017 eV (Peak 1) to a broad asymmetric emission band (Peak 2) eventually located at around 1.955 eV at room temperature. Moreover, the peak position of Peak 2 shows a distinct red shift dependence on the excitation intensity, predicted by the band gap renormalization theory due to the heavy doping. Justified from their spectral features and excitation intensity dependence, the narrow emission band is ascribed to the fundamental band edge free exciton transition, whereas the broad asymmetric one is ascribed to the localized state ensemble induced by photo doping. |
| 关键词[WOS] | TRANSITION-METAL DICHALCOGENIDES ; LIGHT-EMITTING-DIODES ; WSE2 ; MOS2 |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000372644100049 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4659]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_大科学装置 |
| 推荐引用方式 GB/T 7714 | Wang, XH,Ning, JQ,Su, ZC,et al. Photoinduced doping and photoluminescence signature in an exfoliated WS2 monolayer semiconductor[J]. RSC ADVANCES,2016,6(33). |
| APA | Wang, XH.,Ning, JQ.,Su, ZC.,Zheng, CC.,Zhu, BR.,...&Xu, SJ.(2016).Photoinduced doping and photoluminescence signature in an exfoliated WS2 monolayer semiconductor.RSC ADVANCES,6(33). |
| MLA | Wang, XH,et al."Photoinduced doping and photoluminescence signature in an exfoliated WS2 monolayer semiconductor".RSC ADVANCES 6.33(2016). |
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