Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy
文献类型：期刊论文
| 作者 | Bao, W; Su, ZC; Zheng, CC; Ning, JQ(宁吉强); Xu, SJ |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2016 |
| 卷号 | 6 |
| 通讯作者 | Xu, SJ |
| 英文摘要 | Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of "negative" thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires. |
| 关键词[WOS] | LIGHT-EMITTING-DIODES ; EXCITON LUMINESCENCE ; TEMPERATURE ; SEMICONDUCTORS ; ORIGIN ; PHONON |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000384288500001 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4928]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_大科学装置 |
| 推荐引用方式 GB/T 7714 | Bao, W,Su, ZC,Zheng, CC,et al. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy[J]. SCIENTIFIC REPORTS,2016,6. |
| APA | Bao, W,Su, ZC,Zheng, CC,Ning, JQ,&Xu, SJ.(2016).Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy.SCIENTIFIC REPORTS,6. |
| MLA | Bao, W,et al."Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy".SCIENTIFIC REPORTS 6(2016). |
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