中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy

文献类型:期刊论文

作者Bao, W; Su, ZC; Zheng, CC; Ning, JQ(宁吉强); Xu, SJ
刊名SCIENTIFIC REPORTS
出版日期2016
卷号6
通讯作者Xu, SJ
英文摘要Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of "negative" thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires.
关键词[WOS]LIGHT-EMITTING-DIODES ; EXCITON LUMINESCENCE ; TEMPERATURE ; SEMICONDUCTORS ; ORIGIN ; PHONON
收录类别SCI
语种英语
WOS记录号WOS:000384288500001
源URL[http://ir.sinano.ac.cn/handle/332007/4928]  
专题苏州纳米技术与纳米仿生研究所_大科学装置
推荐引用方式
GB/T 7714
Bao, W,Su, ZC,Zheng, CC,et al. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy[J]. SCIENTIFIC REPORTS,2016,6.
APA Bao, W,Su, ZC,Zheng, CC,Ning, JQ,&Xu, SJ.(2016).Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy.SCIENTIFIC REPORTS,6.
MLA Bao, W,et al."Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy".SCIENTIFIC REPORTS 6(2016).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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