Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid
文献类型：期刊论文
| 作者 | Zhang, ZL(张志利); Qin, SJ(秦双娇); Fu, K(付凯); Yu, GH(于国浩); Li, WY; Zhang, XD(张晓东); Sun, SC(孙世闯); Song, L(宋亮); Li, SM(李水明); Hao, RH(郝荣晖) |
| 刊名 | APPLIED PHYSICS EXPRESS
 |
| 出版日期 | 2016 |
| 卷号 | 9期号:8 |
| 通讯作者 | Cai, Y(蔡勇) ; Zhang, BS(张宝顺) |
| 英文摘要 | We characterized an ionic liquid (1-butyl-3-methylimidazolium nitrate, C8H15N3O3) as a photo-electrochemical etchant for fabricating normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Using the ionic liquid, we achieved an etching rate of similar to 2.9 nm/min, which is sufficiently low to facilitate good etching control. The normally-off AlGaN/GaN MIS-HEMT was fabricated with an etching time of 6 min, with the 20 nm low-pressure chemical vapor deposition (LPCVD) silicon nitride (Si3N4) gate dielectric exhibiting a threshold voltage shift from -10 to 1.2 V, a maximum drain current of more than 426 mA/mm, and a breakdown voltage of 582V. (C) 2016 The Japan Society of Applied Physics |
| 关键词[WOS] | SEPARATION ; GAN |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000383983200022 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4548]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Zhang, ZL,Qin, SJ,Fu, K,et al. Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid[J]. APPLIED PHYSICS EXPRESS,2016,9(8). |
| APA | Zhang, ZL.,Qin, SJ.,Fu, K.,Yu, GH.,Li, WY.,...&Zhang, BS.(2016).Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid.APPLIED PHYSICS EXPRESS,9(8). |
| MLA | Zhang, ZL,et al."Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid".APPLIED PHYSICS EXPRESS 9.8(2016). |
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