Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers
文献类型：期刊论文
| 作者 | Wang, W; Fu, K(付凯); Hu, C; Li, FN; Liu, ZC; Li, SY; Lin, F; Fu, J; Wang, J; Wang, HX |
| 刊名 | DIAMOND AND RELATED MATERIALS
 |
| 出版日期 | 2016 |
| 卷号 | 69 |
| 通讯作者 | Wang, HX ; Wang, J |
| 英文摘要 | A diamond-based field-effect transistor (FET) with SiNX and ZrO2 double dielectric layer has been demonstrated. The SiNX and ZrO2 gate dielectric are deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio frequency (RF) sputter methods, respectively. SiNX layer is found to have the ability to preserve the conduction channel at the surface of hydrogen-terminated diamond film. The leakage current density (J) of SiNX/ZrO2 diamond metal-insulator-semiconductor FET (MISFET) keeps lower than 3.88 x 10(-5) A.cm(-2) when the gate bias was changed from 2 V to - 8 V. The double dielectric layer FET operates in a p-type depletion mode, whose maximum drain-source current, threshold voltage, maximum transconductance, effective mobility and sheet hole density are determined to be -28.5 mA.mm(-1), 2.2 V, 4.53 mS.mm(-1), 38.9 cm(2).v(-1).s(-1), and 2.14 x 10(13) cm(-2), respectively. (C) 2016 Published by Elsevier B.V. |
| 关键词[WOS] | HIGH CARRIER MOBILITY ; H-TERMINATED DIAMOND ; SURFACE CONDUCTIVITY ; FETS ; JUNCTION ; PROFILE ; VOLTAGE |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000385602000033 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4665]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Wang, W,Fu, K,Hu, C,et al. Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers[J]. DIAMOND AND RELATED MATERIALS,2016,69. |
| APA | Wang, W.,Fu, K.,Hu, C.,Li, FN.,Liu, ZC.,...&Wang, HX.(2016).Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers.DIAMOND AND RELATED MATERIALS,69. |
| MLA | Wang, W,et al."Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers".DIAMOND AND RELATED MATERIALS 69(2016). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。