Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate
文献类型：期刊论文
| 作者 | Wang, K; Xing, YH; Han, J; Zhao, KK; Guo, LJ; Zhang, YL; Deng, XG(邓旭光); Fan, YM(范亚明); Zhang, BS(张宝顺) |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2016 |
| 卷号 | 671 |
| 通讯作者 | Xing, YH |
| 英文摘要 | GaN epilayers have been grown on Si(111) substrates with various high temperature AlN buffer layers by metal-organic chemical vapor deposition (MOCVD). It is found that, the surface morphology and structural and optical properties of the GaN epilayer strongly depends on the TMAl source flow rate. The properties of GaN films were characterized by X-ray diffraction, atomic force microscopy, Raman, photoluminescence and cathodoluminescence measurements. With the optimized TMAl source flow rate, we were able to obtain a 1-mu m-thick crack-free GaN layer. The (0002) and (10 (1) over bar2) XRD FWHM of the GaN film are 547 and 563 arcsec respectively, the tensile stress calculated from the Raman spectra is 0.4 GPa, and RMS roughness of AFM 5 mu m x 5 mu m scan is 0.539 nm. (C) 2016 Published by Elsevier B.V. |
| 关键词[WOS] | LIGHT-EMITTING-DIODES ; STRESS ; EVOLUTION ; MOCVD ; FILMS ; LAYER |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000371767900057 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4675]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Wang, K,Xing, YH,Han, J,et al. Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,671. |
| APA | Wang, K.,Xing, YH.,Han, J.,Zhao, KK.,Guo, LJ.,...&Zhang, BS.(2016).Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate.JOURNAL OF ALLOYS AND COMPOUNDS,671. |
| MLA | Wang, K,et al."Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate".JOURNAL OF ALLOYS AND COMPOUNDS 671(2016). |
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