Photoconductive probing of the trap distribution in switchable interfaces
文献类型：期刊论文
| 作者 | Tian, Y; Zhang, JM; Guo, CF; Zhang, BS(张宝顺); Liu, Q |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2016 |
| 卷号 | 8期号:2 |
| 通讯作者 | Zhang, BS(张宝顺) |
| 英文摘要 | Interfacial resistive switching features are highly dependent on the distribution of the carrier traps in the interface. However, the lack of probing seriously restricts ways of offering physical insights into its mechanism and improving interfacial resistors. In this work, we investigated a resistive switching interface that consists of Bi2S3 nano networks (BSNN) and F-doped SnO2 (FTO), uncovering the relationship between the decay of the photoconductance in BSNN and interfacial trap distribution. Based on this, we suggest a general method to probe the distribution of various interface traps. This method provides us with a new tool to study the interfacial trap distribution in an interfacial resistor, and it might also be used to understand other interface problems. |
| 关键词[WOS] | PHOTODETECTORS ; NANOWIRES ; FILMS |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000367258500027 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4698]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Tian, Y,Zhang, JM,Guo, CF,et al. Photoconductive probing of the trap distribution in switchable interfaces[J]. NANOSCALE,2016,8(2). |
| APA | Tian, Y,Zhang, JM,Guo, CF,Zhang, BS,&Liu, Q.(2016).Photoconductive probing of the trap distribution in switchable interfaces.NANOSCALE,8(2). |
| MLA | Tian, Y,et al."Photoconductive probing of the trap distribution in switchable interfaces".NANOSCALE 8.2(2016). |
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