AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation
文献类型：期刊论文
| 作者 | Sun, SC; Fu, K(付凯); Yu, GH(于国浩); Zhang, ZL; Song, L; Deng, XG; Qi, ZQ; Li, SM; Sun, Q(孙钱); Cai, Y(蔡勇) |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 108期号:1 |
| 通讯作者 | Chen, CQ ; Fu, K(付凯) |
| 英文摘要 | This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal-organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 x 10(14) cm(-2)) and 90 keV (dose: 1 x 10(14) cm(-2)), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I-DSmax at a gate voltage of 3V was 701 mA/mm and the maximum transconductance gmmax was 83 mS/mm. (C) 2016 AIP Publishing LLC. |
| 关键词[WOS] | FIELD-EFFECT TRANSISTORS ; MOLECULAR-BEAM EPITAXY ; BUFFER LAYER ; DOPED GAN ; POLARIZATION ; HETEROSTRUCTURES ; SAPPHIRE ; STATES ; INP |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000374313000066 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4711]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Sun, SC,Fu, K,Yu, GH,et al. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation[J]. APPLIED PHYSICS LETTERS,2016,108(1). |
| APA | Sun, SC.,Fu, K.,Yu, GH.,Zhang, ZL.,Song, L.,...&Zhang, BS.(2016).AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation.APPLIED PHYSICS LETTERS,108(1). |
| MLA | Sun, SC,et al."AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation".APPLIED PHYSICS LETTERS 108.1(2016). |
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