Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
文献类型：期刊论文
| 作者 | Hua, MY; Lu, YY; Liu, SH; Liu, C; Fu, K(付凯); Cai, Y(蔡勇); Zhang, BS(张宝顺); Chen, KJ |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 37期号:3 |
| 通讯作者 | Hua, MY ; Chen, KJ |
| 英文摘要 | In this letter, we demonstrate an integrated process that illustrates the compatibility of AlN/SiNx passivation with high-performance (i.e. low leakage and high breakdown) low-pressure chemical vapor deposition (LPCVD) SiNx gate dielectric for GaN-based MIS-HEMT. It is shown that the AlN/SiNx passivation structure maintains its superior capability of suppressing the current collapse after enduring high temperature of 780 degrees C during the LPCVD-SiNx deposition. The AlN/SiNx passivation is shown to be significantly better than the LPCVD-SiNx passivation by delivering small dynamic R-ON degradation, especially under high drain bias switching with V-DS > 100 V. |
| 关键词[WOS] | CHEMICAL-VAPOR-DEPOSITION ; LOW-CURRENT-COLLAPSE ; ALGAN/GAN HEMTS ; INTERFACE ; LEAKAGE ; TRAPS ; PEALD |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000372372100007 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4851]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Hua, MY,Lu, YY,Liu, SH,et al. Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT[J]. IEEE ELECTRON DEVICE LETTERS,2016,37(3). |
| APA | Hua, MY.,Lu, YY.,Liu, SH.,Liu, C.,Fu, K.,...&Chen, KJ.(2016).Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT.IEEE ELECTRON DEVICE LETTERS,37(3). |
| MLA | Hua, MY,et al."Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT".IEEE ELECTRON DEVICE LETTERS 37.3(2016). |
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