Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells
文献类型：期刊论文
| 作者 | Yang, WX(杨文献); Dai, P(代盼); Ji, L(季莲); Tan, M; Wu, YY(吴渊渊); Uchida, S; Lu, SL(陆书龙); Yang, H(杨辉) |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2016 |
| 卷号 | 389 |
| 通讯作者 | Lu, SL(陆书龙) |
| 英文摘要 | We report on the fabrication of III-V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell. (C) 2016 Elsevier B.V. All rights reserved. |
| 关键词[WOS] | MOLECULAR-BEAM-EPITAXY ; EFFICIENCY ; DEVICES ; DEPENDENCE ; DIFFUSION ; SPACE ; GAAS ; INP |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000384577600082 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4587]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Yang, WX,Dai, P,Ji, L,et al. Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells[J]. APPLIED SURFACE SCIENCE,2016,389. |
| APA | Yang, WX.,Dai, P.,Ji, L.,Tan, M.,Wu, YY.,...&Yang, H.(2016).Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells.APPLIED SURFACE SCIENCE,389. |
| MLA | Yang, WX,et al."Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells".APPLIED SURFACE SCIENCE 389(2016). |
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