Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells
文献类型：期刊论文
| 作者 | Wu, YY; Ji, L(季莲); Dai, P(代盼); Tan, M(谭明); Lu, SL(陆书龙); Yang, H(杨辉) |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2016 |
| 卷号 | 55期号:2 |
| 通讯作者 | Lu, SL(陆书龙) |
| 英文摘要 | Solid-state molecular beam epitaxy (MBE)-grown InGaAsP/InGaAs dual-junction solar cells on InP substrates are reported. An efficiency of 10.6% under 1-sun AM1.5 global light intensity is realized for the dual-junction solar cell, while the efficiencies of 16.4 and 12.3% are reached for the top InGaAsP and bottom InGaAs cells, respectively. The effects of the buffer layer and back-surface field on the performance of solar cells are discussed. High device performance is achieved in the case of a low concentration of oxygen and weak recombination when InGaAs buffers and InP back-surface field layers are used, respectively. (C) 2016 The Japan Society of Applied Physics |
| 关键词[WOS] | MOLECULAR-BEAM-EPITAXY ; BAND OFFSETS ; EFFICIENCY ; OXYGEN ; HETEROSTRUCTURE ; JUNCTION ; INALAS ; GAAS ; INP |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000369005300015 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4631]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Wu, YY,Ji, L,Dai, P,et al. Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(2). |
| APA | Wu, YY,Ji, L,Dai, P,Tan, M,Lu, SL,&Yang, H.(2016).Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells.JAPANESE JOURNAL OF APPLIED PHYSICS,55(2). |
| MLA | Wu, YY,et al."Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells".JAPANESE JOURNAL OF APPLIED PHYSICS 55.2(2016). |
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