Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk
文献类型：期刊论文
| 作者 | Wu, H; Ji, L; Harasawa, R; Yasue, Y; Aritake, T; Jiang, CY; Lu, SL(陆书龙); Tackeuchi, A |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2016 |
| 卷号 | 6期号:8 |
| 通讯作者 | Tackeuchi, A |
| 英文摘要 | The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 degrees C for 1 s, one was annealed at 700 degrees C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 degrees C-annealed sample and the unannealed sample were similar, that of the 800 degrees C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 degrees C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 degrees C-annealed sample, 700 degrees C-annealed sample, and the unannealed sample, respectively. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
| 关键词[WOS] | QUANTUM-WELLS ; POLARIZATION ; INGAASP |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000383909100040 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4636]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Wu, H,Ji, L,Harasawa, R,et al. Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk[J]. AIP ADVANCES,2016,6(8). |
| APA | Wu, H.,Ji, L.,Harasawa, R.,Yasue, Y.,Aritake, T.,...&Tackeuchi, A.(2016).Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk.AIP ADVANCES,6(8). |
| MLA | Wu, H,et al."Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk".AIP ADVANCES 6.8(2016). |
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