Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer
文献类型：期刊论文
| 作者 | Wu, GJ; Wang, XD; Wang, P; Huang, H; Chen, Y; Sun, S; Shen, H; Lin, T; Wang, JL; Zhang, ST |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2016 |
| 卷号 | 27期号:36 |
| 通讯作者 | Wang, JL |
| 英文摘要 | Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 mu s). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors. |
| 关键词[WOS] | FIELD-EFFECT TRANSISTORS ; GRAPHENE PHOTODETECTOR ; MONOLAYER GRAPHENE ; ROOM-TEMPERATURE ; ELECTRIC-FIELD ; MOS2 ; FILMS ; HETEROSTRUCTURES ; PHOTOTRANSISTORS ; PHOTORESPONSE |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000384064400003 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4637]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Wu, GJ,Wang, XD,Wang, P,et al. Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer[J]. NANOTECHNOLOGY,2016,27(36). |
| APA | Wu, GJ.,Wang, XD.,Wang, P.,Huang, H.,Chen, Y.,...&Chu, JH.(2016).Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer.NANOTECHNOLOGY,27(36). |
| MLA | Wu, GJ,et al."Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer".NANOTECHNOLOGY 27.36(2016). |
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