Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires
文献类型：期刊论文
| 作者 | Wang, P; Yuan, Y; Zhao, C; Wang, XQ; Zheng, XT; Rong, X; Wang, T; Sheng, BW; Wang, QX; Zhang, YQ |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 16期号:2 |
| 通讯作者 | Wang, XQ ; Shen, B ; Zhang, XX |
| 英文摘要 | Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (000 (1) over bar) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (000 (1) over bar) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices. |
| 关键词[WOS] | INITIO MOLECULAR-DYNAMICS ; SINGLE-PHOTON EMISSION ; AUGMENTED-WAVE METHOD ; MINIMUM ENERGY PATHS ; ELASTIC BAND METHOD ; SADDLE-POINTS ; GAN NANOWIRES ; QUANTUM DOTS ; ZNO NANORODS ; SOLAR-CELLS |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000370215200075 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4671]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Wang, P,Yuan, Y,Zhao, C,et al. Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires[J]. NANO LETTERS,2016,16(2). |
| APA | Wang, P.,Yuan, Y.,Zhao, C.,Wang, XQ.,Zheng, XT.,...&Shen, B.(2016).Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.NANO LETTERS,16(2). |
| MLA | Wang, P,et al."Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires".NANO LETTERS 16.2(2016). |
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