Effects of patterned substrate on quality of high indium content InGaN grown by molecular beam epitaxy (MBE)
文献类型：期刊论文
| 作者 | Li, Baoji; Wu, Yuanyuan; Lu, Shulong(陆书龙); Zhang, Jijun |
| 刊名 | Cailiao Daobao/Materials Review
 |
| 出版日期 | 2016 |
| 通讯作者 | Lu, Shulong(陆书龙) |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4818]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Li, Baoji,Wu, Yuanyuan,Lu, Shulong,et al. Effects of patterned substrate on quality of high indium content InGaN grown by molecular beam epitaxy (MBE)[J]. Cailiao Daobao/Materials Review,2016. |
| APA | Li, Baoji,Wu, Yuanyuan,Lu, Shulong,&Zhang, Jijun.(2016).Effects of patterned substrate on quality of high indium content InGaN grown by molecular beam epitaxy (MBE).Cailiao Daobao/Materials Review. |
| MLA | Li, Baoji,et al."Effects of patterned substrate on quality of high indium content InGaN grown by molecular beam epitaxy (MBE)".Cailiao Daobao/Materials Review (2016). |
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