Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy
文献类型：期刊论文
| 作者 | He, W; Lu, SL(陆书龙); Yang, H(杨辉) |
| 刊名 | JOURNAL OF INFRARED AND MILLIMETER WAVES
 |
| 出版日期 | 2016 |
| 卷号 | 35期号:2 |
| 通讯作者 | He, W |
| 英文摘要 | The initial heteroepitaxial growth stages of GaAs on Ge (100) by all-solid-source molecular beam epitaxy (MBE) were studied by means of reflection high-energy electron diffraction (RHEED), high resolution X-ray diffraction (XRD) and atomic force microscopy, as well as the effects of different growth conditions to the epitaxial layer qualities. It was indicated that high growth temperatures or low growth rates enabled a layer-by-layer growth mode of initial GaAs nucleation layer which was evidenced by RHEED patterns. However, the combination of low growth temperatures and low growth rates for the initial GaAs layer gave lower full-width at half-maximum value of rocking curves and lower surface roughness of the epitaxial materials, owing to the decrease of the lattice mismatch between substrates and epi-layers. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000375514900015 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4865]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | He, W,Lu, SL,Yang, H. Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2016,35(2). |
| APA | He, W,Lu, SL,&Yang, H.(2016).Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy.JOURNAL OF INFRARED AND MILLIMETER WAVES,35(2). |
| MLA | He, W,et al."Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy".JOURNAL OF INFRARED AND MILLIMETER WAVES 35.2(2016). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。