Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy
文献类型：期刊论文
| 作者 | Dai, P(代盼); Lu, SL(陆书龙); Uchida, SR; Ji, L(季莲); Wu, YY(吴渊渊); Tan, M(谭明); Bian, LF(边历峰); Yang, H(杨辉) |
| 刊名 | APPLIED PHYSICS EXPRESS
 |
| 出版日期 | 2016 |
| 卷号 | 9期号:1 |
| 通讯作者 | Lu, SL(陆书龙) ; Uchida, SR |
| 英文摘要 | An InGaP/GaAs tandem cell on a GaAs substrate and an InGaAsP/InGaAs tandem cell on an InP substrate were grown separately by all-solid-state molecular beam epitaxy. A room-temperature direct wafer-bonding technique was used to integrate these subcells into an InGaP/GaAs//InGaAsP/InGaAs wafer-bonded solar cell, which resulted in an abrupt interface with low resistance and high optical transmission. The current-matching design for the base layer thickness of each cell was investigated. The resulting efficiency of the four-junction solar cell was 42.0% at 230 suns, which demonstrates the great potential of the room-temperature wafer-bonding technique to achieve high conversion efficiency for cells with four or more junctions. (C) 2016 The Japan Society of Applied Physics |
| 关键词[WOS] | EFFICIENCY ; DIFFUSION ; JUNCTION ; GAAS ; SI |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000370161900025 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4900]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Dai, P,Lu, SL,Uchida, SR,et al. Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy[J]. APPLIED PHYSICS EXPRESS,2016,9(1). |
| APA | Dai, P.,Lu, SL.,Uchida, SR.,Ji, L.,Wu, YY.,...&Yang, H.(2016).Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy.APPLIED PHYSICS EXPRESS,9(1). |
| MLA | Dai, P,et al."Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy".APPLIED PHYSICS EXPRESS 9.1(2016). |
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