Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge
文献类型：期刊论文
| 作者 | Chen, JX(陈俊霞); He, W; Jia, SP; Jiang, DS; Lu, SL(陆书龙); Bian, LF(边历峰); Yang, H(杨辉) |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2016 |
| 卷号 | 45期号:1 |
| 通讯作者 | Lu, SL(陆书龙) |
| 英文摘要 | The photoluminescence (PL) properties of a GaInP epilayer with an ultrathin AlAs interfacial layer grown on Ge were investigated by time-resolved photoluminescence spectroscopy and temperature-dependent PL spectroscopy. A double-exponential PL decay with two time constants was observed, where the fast component is attributed to the emission from ordered GaInP while the slow component is related to localized states. Increased thickness of the AlAs interfacial layer resulted in an increased PL decay time due to the increased degree of order of the GaInP. Furthermore, the broad PL peak around 1.57 eV appearing in the GaInP epilayer after insertion of the AlAs layer might be attributed to phosphorus-vacancy-related deep levels. |
| 关键词[WOS] | SOLAR-CELLS ; DEEP LEVELS ; GAAS ; GA0.52IN0.48P ; DEPENDENCE ; LIFETIMES |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000367467800102 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4919]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
| 推荐引用方式 GB/T 7714 | Chen, JX,He, W,Jia, SP,et al. Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge[J]. JOURNAL OF ELECTRONIC MATERIALS,2016,45(1). |
| APA | Chen, JX.,He, W.,Jia, SP.,Jiang, DS.,Lu, SL.,...&Yang, H.(2016).Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge.JOURNAL OF ELECTRONIC MATERIALS,45(1). |
| MLA | Chen, JX,et al."Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge".JOURNAL OF ELECTRONIC MATERIALS 45.1(2016). |
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