Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO
文献类型：期刊论文
| 作者 | Jin, L(靳琳); Chen, Q(陈沁); Liu, WW(柳婉婉); Song, SC(宋世超) |
| 刊名 | PLASMONICS
 |
| 出版日期 | 2016 |
| 卷号 | 11期号:4 |
| 通讯作者 | Chen, Q(陈沁) |
| 英文摘要 | An electro-absorption modulator based on indium tin oxide is proposed by constructing a waveguide consisting of metal-dielectric-ITO-dielectric-Si stack. Applying a negative voltage bias on the ITO layer, carrier accumulation occurs at both dielectric-ITO interfaces, which dramatically changes the guided mode properties due to the epsilon-near-zero effect. By tuning the real part of the permittivity around zero, the guided plasmonic mode concentrates in either ITO or dielectric layers, resulting in a high propagation loss. These dual carrier accumulation layers significantly improve the extinction ratio of the modulator. A further improvement is obtained by using high refractive index dielectric thin layers, which provides a strong optical confinement in the carrier accumulation layers. The dual carrier accumulation layer device shows a 200 % increase of the modulation efficiency compared to a single accumulation layer design. A modulation depth of 9.9 dB/mu m can be achieved by numerical simulation. |
| 关键词[WOS] | PLASMONIC WAVE-GUIDES ; OPTICAL MODULATORS ; PLASMOSTOR ; DEPENDENCE |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000379179300018 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4831]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_陈沁团队 |
| 推荐引用方式 GB/T 7714 | Jin, L,Chen, Q,Liu, WW,et al. Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO[J]. PLASMONICS,2016,11(4). |
| APA | Jin, L,Chen, Q,Liu, WW,&Song, SC.(2016).Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO.PLASMONICS,11(4). |
| MLA | Jin, L,et al."Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO".PLASMONICS 11.4(2016). |
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