Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process
文献类型：期刊论文
| 作者 | Yu, Shu-Zhen(于淑珍); Song, Yan(宋焱); Dong, Jian-Rong(董建荣); Sun, Yu-Run(孙玉润); Zhao, Yong-Ming(赵勇明); He, Yang(何洋) |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2016 |
| 卷号 | 25期号:11 |
| 通讯作者 | Yu, Shu-Zhen(于淑珍) |
| 英文摘要 | Low metal-graphene contact resistance is important in making high-performance graphene devices. In this work, we demonstrate a lower specific contact resistivity of Au0.88Ge0.12/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts. The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance. Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance. The specific contact resistivity decreases from 2.5 x 10(-4) to 7.8 x 10(-5) Omega.cm(2) by pre-annealing at 300 degrees C for one hour, and continues to decrease to 9.5 x 10(-7) Omega.cm(2) after post-annealing at 490 degrees C for 60 seconds. These approaches provide reliable means of lowering contact resistance. |
| 关键词[WOS] | RESISTANCE ; DEVICES |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000390376900083 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4575]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 推荐引用方式 GB/T 7714 | Yu, Shu-Zhen,Song, Yan,Dong, Jian-Rong,et al. Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process[J]. CHINESE PHYSICS B,2016,25(11). |
| APA | Yu, Shu-Zhen,Song, Yan,Dong, Jian-Rong,Sun, Yu-Run,Zhao, Yong-Ming,&He, Yang.(2016).Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process.CHINESE PHYSICS B,25(11). |
| MLA | Yu, Shu-Zhen,et al."Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process".CHINESE PHYSICS B 25.11(2016). |
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