Optimization for etching shallow ridge and trench profiles on silicon based on continuous etching process in ICPRIE system
文献类型：期刊论文
| 作者 | Wan, L; Li, X; Zhu, N; Zhang, RY(张瑞英); Mei, T |
| 刊名 | MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
 |
| 出版日期 | 2016 |
| 卷号 | 22期号:8 |
| 通讯作者 | Mei, T |
| 英文摘要 | In order to directly characterize sidewall roughnesses of shallow microstructures with etching depth less than 10 mu m using a conventional atomic force microscope tip, an easy bevel-cut sample technique was developed. With help of the proposed measurement technique, the sidewall verticalities and roughnesses between trench and ridge profiles were compared and optimized using an L9 orthogonal array experiment based on a simple continuous dry-etching process. Additionally, due to the influence of loading effect, the contribution proportions of four control factors on etching quality characteristics were evaluated. As some improved measurement results, optimized root mean square sidewall roughnesses of 3.61 and 4.7 nm were obtained for ridge and trench structures, respectively, with depth greater than 4 mu m and the sidewall verticality of 90 +/- 1 degrees. |
| 关键词[WOS] | RIB WAVE-GUIDES ; FABRICATION ; ROUGHNESS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000380121700023 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4692]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队 |
| 推荐引用方式 GB/T 7714 | Wan, L,Li, X,Zhu, N,et al. Optimization for etching shallow ridge and trench profiles on silicon based on continuous etching process in ICPRIE system[J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS,2016,22(8). |
| APA | Wan, L,Li, X,Zhu, N,Zhang, RY,&Mei, T.(2016).Optimization for etching shallow ridge and trench profiles on silicon based on continuous etching process in ICPRIE system.MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS,22(8). |
| MLA | Wan, L,et al."Optimization for etching shallow ridge and trench profiles on silicon based on continuous etching process in ICPRIE system".MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS 22.8(2016). |
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