Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD
文献类型：期刊论文
| 作者 | Zhang, Feng(张峰); Ikeda, Masao; Zhang, Shu-Ming(张书明); Liu, Jian-Ping(刘建平); Tian, Ai-Qin(田爱琴); Wen, Peng-Yan(温鹏雁); Cheng, Yang(程洋); Yang, Hui(杨辉) |
| 刊名 | Nanoscale Research Letters
 |
| 出版日期 | 2016 |
| 通讯作者 | Ikeda, M |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000391796600002 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4563]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Zhang, Feng,Ikeda, Masao,Zhang, Shu-Ming,et al. Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD[J]. Nanoscale Research Letters,2016. |
| APA | Zhang, Feng.,Ikeda, Masao.,Zhang, Shu-Ming.,Liu, Jian-Ping.,Tian, Ai-Qin.,...&Yang, Hui.(2016).Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.Nanoscale Research Letters. |
| MLA | Zhang, Feng,et al."Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD".Nanoscale Research Letters (2016). |
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