Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs
文献类型：期刊论文
| 作者 | Yang, J; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Liu, JP(刘建平); Zhang, LQ(张立群); Yang, H(杨辉); Zhang, YT |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2016 |
| 卷号 | 681 |
| 通讯作者 | Zhao, DG |
| 英文摘要 | A series of InGaN/GaN multi-quantum well (MQW) LEDs are grown by using metalorganic chemical vapor deposition (MOCVD) with similar structure but at different temperature, their structural and optical characteristics are investigated in detail. It is unexpectedly found that the output power of LEDs increases markedly when the growth temperature of InGaN QWs decreases from 820 degrees C to as low as 770 degrees C. This is attributed to the variation of localization states with the decrease of growth temperature. In the lower temperature (LT) grown InGaN/GaN MQWs, the formation of large and high indium content In-rich regions accompanied with defects is better suppressed, while the formation of shallower and more homogeneous localization states, behaving as effective luminescence centers, are more favored. Therefore, enhanced emission intensity is observed in the LT-grown InGaN/GaN MQW LEDs. (C) 2016 Elsevier B.V. All rights reserved. |
| 关键词[WOS] | BARRIER GROWTH TEMPERATURE ; DEPENDENCE ; BAND ; WAVELENGTH ; EXCITONS ; INDIUM ; SHIFT ; GAP |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000376443300064 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4596]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang, J,Zhao, DG,Jiang, DS,et al. Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,681. |
| APA | Yang, J.,Zhao, DG.,Jiang, DS.,Chen, P.,Zhu, JJ.,...&Du, GT.(2016).Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs.JOURNAL OF ALLOYS AND COMPOUNDS,681. |
| MLA | Yang, J,et al."Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs".JOURNAL OF ALLOYS AND COMPOUNDS 681(2016). |
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