Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes
文献类型：期刊论文
| 作者 | Yang, J; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Li, XJ; He, XG; Liu, JP(刘建平); Zhang, LQ(张立群) |
| 刊名 | OPTICS EXPRESS
 |
| 出版日期 | 2016 |
| 卷号 | 24期号:13 |
| 通讯作者 | Zhao, DG |
| 英文摘要 | A series of samples with varying growth pressure are grown and their optical and structural properties are investigated. It is found that the residual carbon concentration decreases when the reactor pressure increases from 80 to 450 Torr during the InGaN/GaN multiple quantum well growth. It results in an enhanced peak intensity of electroluminescence because carbon impurities can induce deep energy levels and act as non-radiative recombination centers in InGaN layers. (C) 2016 Optical Society of America |
| 关键词[WOS] | CHEMICAL-VAPOR-DEPOSITION ; OPTICAL-PROPERTIES ; GAN ; PRESSURE |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000381759800012 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4600]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Yang, J,Zhao, DG,Jiang, DS,et al. Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes[J]. OPTICS EXPRESS,2016,24(13). |
| APA | Yang, J.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Du, GT.(2016).Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes.OPTICS EXPRESS,24(13). |
| MLA | Yang, J,et al."Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes".OPTICS EXPRESS 24.13(2016). |
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