Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers
文献类型：期刊论文
| 作者 | Weng, GE; Mei, Y; Liu, JP(刘建平); Hofmann, W; Ying, LY; Zhang, JY; Bu, YK; Li, ZC; Yang, H(杨辉); Zhang, BP |
| 刊名 | OPTICS EXPRESS
 |
| 出版日期 | 2016 |
| 卷号 | 24期号:14 |
| 通讯作者 | Zhang, BP |
| 英文摘要 | Low threshold continuous-wave (CW) lasing of current injected InGaN quantum dot (QD) vertical-cavity surface-emitting lasers (VCSELs) was achieved at room temperature. The VCSEL was fabricated by metal bonding technique on a copper substrate to improve the heat dissipation ability of the device. For the first time, lasing was obtained at yellow-green wavelength of 560.4 nm with a low threshold of 0.61 mA, corresponding to a current density of 0.78 kA/cm(2). A high degree of polarization of 94% were measured. Despite the operation in the range of "green gap" of GaN-based devices, single longitudinal mode laser emission was clearly achieved due to the high quality of active region based on InGaN QDs and the excellent thermal design of the VCSELs. (C)2016 Optical Society of America |
| 关键词[WOS] | QUANTUM DOTS ; DIODES ; FIELDS |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000381770500050 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4640]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Weng, GE,Mei, Y,Liu, JP,et al. Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers[J]. OPTICS EXPRESS,2016,24(14). |
| APA | Weng, GE.,Mei, Y.,Liu, JP.,Hofmann, W.,Ying, LY.,...&Zhang, BP.(2016).Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers.OPTICS EXPRESS,24(14). |
| MLA | Weng, GE,et al."Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers".OPTICS EXPRESS 24.14(2016). |
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