Investigation of InGaN/GaN laser degradation based on luminescence properties
文献类型：期刊论文
| 作者 | Wen, PY(温鹏雁); Zhang, SM(张书明); Liu, JP(刘建平); Li, DY(李德尧); Zhang, LQ(张立群); Sun, Q(孙钱); Tian, AQ(田爱琴); Zhou, K; Zhou, TF(周桃飞); Yang, H(杨辉) |
| 刊名 | JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2016 |
| 卷号 | 119期号:21 |
| 通讯作者 | Zhang, SM(张书明) |
| 英文摘要 | Degradation of InGaN/GaN laser diode (LD) is investigated based on the luminescence properties. Gradual degradation of the LD is presented with the threshold current increase and the slope efficiency decrease. The cathodoluminescence and photoluminescence characterizations of the LD show a dislocation independent degradation of the active region under the ridge. Detailed studies on the temperature-dependent micro-photoluminescence and the electroluminescence indicate that the degradation of the LD is attributed to the generation of non-radiative recombination centers in the local multiple quantum well regions with lower indium content. The activation energy of the non-radiative recombination centers is about 10.2 meV. Published by AIP Publishing. |
| 关键词[WOS] | LIGHT-EMITTING-DIODES ; MULTIPLE-QUANTUM WELLS ; MECHANISMS ; EMISSION |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000378923100007 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4641]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Wen, PY,Zhang, SM,Liu, JP,et al. Investigation of InGaN/GaN laser degradation based on luminescence properties[J]. JOURNAL OF APPLIED PHYSICS,2016,119(21). |
| APA | Wen, PY.,Zhang, SM.,Liu, JP.,Li, DY.,Zhang, LQ.,...&Yang, H.(2016).Investigation of InGaN/GaN laser degradation based on luminescence properties.JOURNAL OF APPLIED PHYSICS,119(21). |
| MLA | Wen, PY,et al."Investigation of InGaN/GaN laser degradation based on luminescence properties".JOURNAL OF APPLIED PHYSICS 119.21(2016). |
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