Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC
文献类型：期刊论文
| 作者 | Liang, F; Chen, P; Zhao, DG; Jiang, DS; Zhao, ZJ; Liu, ZS; Zhu, JJ; Yang, J; Liu, W; He, XG |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2016 |
| 卷号 | 25期号:5 |
| 通讯作者 | Chen, P |
| 英文摘要 | We have investigated the electron affinity of Si-doped AlN films (N-Si = 1.0 x 10(18)-1.0 x 10(19) cm(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations. |
| 关键词[WOS] | SCHOTTKY-BARRIER HEIGHT ; FIELD-EMISSION ; ALUMINUM NITRIDE ; DISPLAY STRUCTURE ; TITANIUM ; SURFACES ; DIAMOND |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000375681800061 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4785]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Liang, F,Chen, P,Zhao, DG,et al. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC[J]. CHINESE PHYSICS B,2016,25(5). |
| APA | Liang, F.,Chen, P.,Zhao, DG.,Jiang, DS.,Zhao, ZJ.,...&Du, GT.(2016).Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC.CHINESE PHYSICS B,25(5). |
| MLA | Liang, F,et al."Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC".CHINESE PHYSICS B 25.5(2016). |
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