XPS study of impurities in Si-doped AlN film
文献类型：期刊论文
| 作者 | Liang, F; Chen, P; Zhao, DG; Jiang, DS; Zhao, ZJ; Liu, ZS; Zhu, JJ; Yang, J; Le, LC; Liu, W |
| 刊名 | SURFACE AND INTERFACE ANALYSIS
 |
| 出版日期 | 2016 |
| 卷号 | 48期号:12 |
| 通讯作者 | Chen, P |
| 英文摘要 | This paper reports an XPS study of impurities in a 100-nm-thick AlN film grown by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type 6H-SiC substrate. The Si-doped AlN film was characterized by the X-ray photoelectron spectroscopy (XPS) in a high vacuum system, which reveals the content distribution and chemical states of impurities along depth. The XPS analysis of AlN film before and after argon-ion etching indicates that there always exist Ga, O and C contaminations in AlN film. Especially, O contamination on the AlN film surface is mostly introduced during the growth of AlN layer by MOCVD. Meanwhile, most of O atoms bind with Al or Ga in Al?O and Ga?O chemical states. In particular, the Ga atoms in AlN film are always in two chemical states, i.e. Ga?Ga bond and Ga?O bond, which demonstrates that the aggregation of Ga is accompanying with AlN growth. Copyright (c) 2016 John Wiley & Sons, Ltd. |
| 关键词[WOS] | ATOMIC LAYER DEPOSITION ; UNINTENTIONAL INCORPORATION ; ELECTRON-AFFINITY ; EPITAXIAL-GROWTH ; GAN ; SURFACES ; PHOTOELECTRON ; DESORPTION ; BEHAVIOR ; GALLIUM |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000387671200006 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4787]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Liang, F,Chen, P,Zhao, DG,et al. XPS study of impurities in Si-doped AlN film[J]. SURFACE AND INTERFACE ANALYSIS,2016,48(12). |
| APA | Liang, F.,Chen, P.,Zhao, DG.,Jiang, DS.,Zhao, ZJ.,...&Du, GT.(2016).XPS study of impurities in Si-doped AlN film.SURFACE AND INTERFACE ANALYSIS,48(12). |
| MLA | Liang, F,et al."XPS study of impurities in Si-doped AlN film".SURFACE AND INTERFACE ANALYSIS 48.12(2016). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。