Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD
文献类型：期刊论文
| 作者 | Liang, F.; Chen, P.; Zhao, D.G.; Jiang, D.S.; Liu, Z.S.; Zhu, J.J.; Yang, J.; Liu, W.; Li, X.; Liu, S.T. |
| 刊名 | Materials Technology
 |
| 出版日期 | 2016 |
| 通讯作者 | Chen, P. |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4790]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Liang, F.,Chen, P.,Zhao, D.G.,et al. Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD[J]. Materials Technology,2016. |
| APA | Liang, F..,Chen, P..,Zhao, D.G..,Jiang, D.S..,Liu, Z.S..,...&Du, G.T..(2016).Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD.Materials Technology. |
| MLA | Liang, F.,et al."Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD".Materials Technology (2016). |
入库方式： OAI收割
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