The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content
文献类型：期刊论文
| 作者 | Li, X; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Yang, J; Liu, W; He, XG; Li, XJ |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| 出版日期 | 2016 |
| 卷号 | 213期号:8 |
| 通讯作者 | Zhao, DG |
| 英文摘要 | The effects of Al composition in p-type AlGaN electron blocking layer (EBL) on electron leakage and device performance in InGaN-based quantum well (QW) laser diodes (LDs) are numerically investigated in connection with the depth of QWs. It is found that the effectiveness of EBL in blocking electron leakage depends much on Al content in EBL and In content in InGaN QWs. It is effective for low-In-content InGaN QWLDs to add moderate Al in AlGaN EBL, while it is hardly helpful and even harmful for high-In-content InGaN QWLDs to increase Al content. In addition, it is found that too much Al in EBL is unfavorable for all LDs due to the downward conduction band-bending in the last quantum barrier (LQB) layer. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| 关键词[WOS] | POLARIZATION |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000385223900031 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4798]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Li, X,Zhao, DG,Jiang, DS,et al. The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2016,213(8). |
| APA | Li, X.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Yang, H.(2016).The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,213(8). |
| MLA | Li, X,et al."The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 213.8(2016). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。