A low resistivity n(++)-InGaN/p(++)-GaN polarization-induced tunnel junction
文献类型：期刊论文
| 作者 | Hu, WW; Zhang, SM(张书明); Ikeda, M; Chen, YG; Liu, JP(刘建平); Feng, MX; Li, DY(李德尧); Zhang, F; Zhou, K; Tian, AQ |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2016 |
| 卷号 | 49期号:11 |
| 通讯作者 | Zhang, SM(张书明) |
| 英文摘要 | A low resistivity n(++)-InGaN/p(++)-GaN tunnel junction is illustrated. The tunneling current density of tunnel junction with 30 percent In content in InGaN layer turns out to be extraordinary high (10 kA cm(-2)) even at a relatively low bias voltage (0.1 V) compared with traditional n(++)-GaN/p(++)-GaN. And we optimize the InGaN layer including the thickness, indium component and the doping concentration to increase the tunneling probability with the 1D Schrodinger Poisson self-consistent method and WKB (Wentzel-Kramers-Brillouin) approximation. It is shown that the peak value of electric field in tunnel junction caused by spontaneous polarization and piezoelectric effect reaches 7.1 MV cm(-1) with the 2D hole gas concentration of 2 x 10(20) cm(-3) at the interface between InGaN and GaN. That indicates n(++)-InGaN/p(++)-GaN tunnel junction has a potential application in GaN-based optoelectronic device. |
| 关键词[WOS] | GAN ; MG |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000371007100006 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4858]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Hu, WW,Zhang, SM,Ikeda, M,et al. A low resistivity n(++)-InGaN/p(++)-GaN polarization-induced tunnel junction[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2016,49(11). |
| APA | Hu, WW.,Zhang, SM.,Ikeda, M.,Chen, YG.,Liu, JP.,...&Yang, H.(2016).A low resistivity n(++)-InGaN/p(++)-GaN polarization-induced tunnel junction.JOURNAL OF PHYSICS D-APPLIED PHYSICS,49(11). |
| MLA | Hu, WW,et al."A low resistivity n(++)-InGaN/p(++)-GaN polarization-induced tunnel junction".JOURNAL OF PHYSICS D-APPLIED PHYSICS 49.11(2016). |
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