Hole transport in c-plane InGaN-based green laser diodes
文献类型：期刊论文
| 作者 | Cheng, Y(程洋); Liu, JP(刘建平); Tian, AQ(田爱琴); Zhang, F(张峰); Feng, MX(冯美鑫); Hu, WW(胡威威); Zhang, SM(张书明); Ikeda, M; Li, DY(李德尧); Zhang, LQ(张立群) |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 109期号:9 |
| 通讯作者 | Liu, JP(刘建平) |
| 英文摘要 | Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs. Published by AIP Publishing. |
| 关键词[WOS] | SIMULATION ; GAN ; MODEL |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000384401900022 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4903]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
| 推荐引用方式 GB/T 7714 | Cheng, Y,Liu, JP,Tian, AQ,et al. Hole transport in c-plane InGaN-based green laser diodes[J]. APPLIED PHYSICS LETTERS,2016,109(9). |
| APA | Cheng, Y.,Liu, JP.,Tian, AQ.,Zhang, F.,Feng, MX.,...&Yang, H.(2016).Hole transport in c-plane InGaN-based green laser diodes.APPLIED PHYSICS LETTERS,109(9). |
| MLA | Cheng, Y,et al."Hole transport in c-plane InGaN-based green laser diodes".APPLIED PHYSICS LETTERS 109.9(2016). |
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