Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)
文献类型：期刊论文
| 作者 | Li, SM(李水明); Zhou, Y(周宇); Gao, HW(高宏伟); Dai, SJ(戴淑君); Yu, GH(于国浩); Sun, Q(孙钱); Cai, Y(蔡勇); Zhang, BS(张宝顺); Liu, S; Yang, H(杨辉) |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2016 |
| 卷号 | 6期号:3 |
| 通讯作者 | Sun, Q(孙钱) |
| 英文摘要 | Electrical breakdown characteristics of AlxGa1-xN buffer layers grown on Si(111) are investigated by varying the carbon concentration ([C]: from similar to 10(16) to 10(19) cm(-3)), Al-composition (x = 0 and 7%), and buffer thickness (from 1.6 to 3.1 pi m). A quantitative relationship between the growth conditions and carbon concentration ([C]) is established, which can guide to grow the Ga(Al)N layer with a given [C]. It is found that the carbon incorporation is sensitive to the growth temperature (T) (exponential relationship between [C] and 1/T) and the improvement of breakdown voltage by increasing [C] is observed to be limited when [C] exceeding 1019 cm-3, which is likely due to carbon self-compensation. By increasing the highly resistive (HR) Al0.07Ga0.93N buffer thickness from 1.6 to 3.1 pi m, the leakage current is greatly reduced down to 1 pi A/mm at a bias voltage of 1000 V. (c) 2016 Author(s). |
| 关键词[WOS] | CHEMICAL-VAPOR-DEPOSITION ; SEMIINSULATING GAN ; CARBON ; SI ; BUFFER ; LAYERS ; MOVPE |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000373684200088 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4805]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 推荐引用方式 GB/T 7714 | Li, SM,Zhou, Y,Gao, HW,et al. Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)[J]. AIP ADVANCES,2016,6(3). |
| APA | Li, SM.,Zhou, Y.,Gao, HW.,Dai, SJ.,Yu, GH.,...&Yang, H.(2016).Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111).AIP ADVANCES,6(3). |
| MLA | Li, SM,et al."Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)".AIP ADVANCES 6.3(2016). |
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