High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
文献类型：期刊论文
| 作者 | Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Bao, Qilong; Wei, Ke; Zheng, Yingkui; Zhao, Chao; Gao, Hongwei(高宏伟) |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 37期号:12 |
| 通讯作者 | Huang, S |
| 英文摘要 | Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). The sheet resistance of 2-D electron gas in the UTB Al0.22Ga0.78N(5-nm)/GaN heterostructure is effectively reduced by SiNx passivation grown by low-pressure chemical vapor deposition, from 2570 to 334 Omega/square. The fabricated Al2O3/AlGaN/GaN MIS-HEMTs exhibit normally-OFF behavior with good V-TH uniformity and low V-TH-hysteresis. 20 mm-gate-width power devices featuring a low R-on of 0.75 Omega (I-D,I- MAX = 6.5 A) are also demonstrated on the platform. |
| 关键词[WOS] | ELECTRON-MOBILITY TRANSISTORS ; MODULATION ; VOLTAGE ; LAYER |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000389332700022 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4847]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 推荐引用方式 GB/T 7714 | Huang, Sen,Liu, Xinyu,Wang, Xinhua,et al. High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure[J]. IEEE ELECTRON DEVICE LETTERS,2016,37(12). |
| APA | Huang, Sen.,Liu, Xinyu.,Wang, Xinhua.,Kang, Xuanwu.,Zhang, Jinhan.,...&Chen, Kevin J..(2016).High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure.IEEE ELECTRON DEVICE LETTERS,37(12). |
| MLA | Huang, Sen,et al."High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure".IEEE ELECTRON DEVICE LETTERS 37.12(2016). |
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