Properties of AlN film grown on Si (111)
文献类型：期刊论文
| 作者 | Dai, YQ; Li, SM; Sun, Q(孙钱); Peng, Q; Gui, CQ; Zhou, Y(周宇); Liu, S |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2016 |
| 卷号 | 435 |
| 通讯作者 | Liu, S |
| 英文摘要 | Stress and strain in an AlN film grown on Si (111) substrate have been evaluated by measuring Raman frequency shifts. Mechanical properties and phonon deformation potentials of AlN are evaluated by first principles calculations. The calculation model is verified by comparing the calculated Raman frequencies and frequencies detected from a bulk single crystal. Results show that the two sets of frequencies agree very well with each other. Thus, with the same verified model and parameters, elastic constants and phonon deformation potentials are calculated. Additionally, we successfully develop a numerical model to verify the calculation above and the model itself is also useful to predict properties of crystal films. Finally, the stress, strain, and piezoelectric properties are analyzed and compared for films on different substrates. (C) 2015 Elsevier B.V. All rights reserved. |
| 关键词[WOS] | WURTZITE-TYPE CRYSTALS ; ELASTIC-CONSTANTS ; THERMAL-EXPANSION ; DEFORMATION POTENTIALS ; ALUMINUM NITRIDE ; SINGLE-CRYSTAL ; GAN ; TEMPERATURE ; SEMICONDUCTORS ; STRESS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000367536600014 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4898]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 推荐引用方式 GB/T 7714 | Dai, YQ,Li, SM,Sun, Q,et al. Properties of AlN film grown on Si (111)[J]. JOURNAL OF CRYSTAL GROWTH,2016,435. |
| APA | Dai, YQ.,Li, SM.,Sun, Q.,Peng, Q.,Gui, CQ.,...&Liu, S.(2016).Properties of AlN film grown on Si (111).JOURNAL OF CRYSTAL GROWTH,435. |
| MLA | Dai, YQ,et al."Properties of AlN film grown on Si (111)".JOURNAL OF CRYSTAL GROWTH 435(2016). |
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