Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling
文献类型：期刊论文
| 作者 | Dai, YQ; Li, SM; Gao, HW; Wang, WH; Sun, Q(孙钱); Peng, Q; Gui, CQ; Qian, ZF; Liu, S |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2016 |
| 卷号 | 27期号:2 |
| 通讯作者 | Dai, YQ ; Liu, S |
| 英文摘要 | We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mismatch between the film and substrate. The model is verified by Raman scattering experiments with carefully prepared samples. The stresses analyzed from Raman frequency shifts in experiments show excellent agreement with the stresses from finite element modeling simulations. The interaction force mechanisms and the impact factors are compared. The analysis provides an insight in understanding the defect behaviors in film growth. Our model could be useful in the evaluation of the residual stresses and deformations in film growth control, post thermal process in device manufacture, packaging, and reliability estimation. |
| 关键词[WOS] | THERMAL-EXPANSION ; LATTICE-PARAMETERS ; ELASTIC-CONSTANTS ; THIN-FILMS ; CRYSTALS ; ALGAN ; SEMICONDUCTORS ; SILICON ; DEVICES ; STATE |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000369010900128 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4899]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队 |
| 推荐引用方式 GB/T 7714 | Dai, YQ,Li, SM,Gao, HW,et al. Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(2). |
| APA | Dai, YQ.,Li, SM.,Gao, HW.,Wang, WH.,Sun, Q.,...&Liu, S.(2016).Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,27(2). |
| MLA | Dai, YQ,et al."Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 27.2(2016). |
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