Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer
文献类型：期刊论文
| 作者 | Zhang, ZL(张志利); Yu, GH(于国浩); Zhang, XD(张晓东); Deng, XG(邓旭光); Li, SM(李水明); Fan, YM(范亚明); Sun, SC(孙世闯); Song, L(宋亮); Tan, SX; Wu, DD(吴冬东) |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2016 |
| 卷号 | 63期号:2 |
| 通讯作者 | Fu, K(付凯) ; Cai, Y(蔡勇) ; Huang, W |
| 英文摘要 | This paper investigates the performance of AlGaN/gallium nitride (GaN) MIS high electron mobility transistors (MIS-HEMTs). The gate dielectric layer and the surface passivation layer are formed by the low-pressure chemical vapor deposition (LPCVD) Si3N4. The LPCVD-Si3N4 MIS-HEMTs exhibit a high breakdown voltage (BV) of 1162 V at I-DS = 1 mu A/mm, a low OFF-state leakage of 7.7 x 10(-12) A/mm, and an excellent ON/OFF-current ratio of similar to 10(11). Compared with the static ON-resistance of 2.88 m Omega . cm(2), the dynamic ON-resistance after high OFF-state drain bias stress at 600 V only increases to 4.89 m Omega . cm(2). The power device figure of merit = BV2/R-ON.sp is calculated to be 469 MW . cm(-2). The LPCVD-Si3N4/GaN interface state density is in the range of (1.4-5.3) x 10(13) eV(-1) cm(-2) extracted by the conventional conductance method. Finally, the gate insulator degradation of GaN-based MIS-HEMTs is analyzed by time-dependent dielectric breakdown test. The lifetime is extrapolated to 0.01% of failures after ten years at 300 K by fitting the data with a power law to a gate voltage of 10.1 V. |
| 关键词[WOS] | ELECTRON-MOBILITY TRANSISTORS ; CURRENT COLLAPSE ; LEAKAGE-CURRENT ; DEPOSITION |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000369304700030 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4547]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 |
| 推荐引用方式 GB/T 7714 | Zhang, ZL,Yu, GH,Zhang, XD,et al. Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(2). |
| APA | Zhang, ZL.,Yu, GH.,Zhang, XD.,Deng, XG.,Li, SM.,...&Zhang, BS.(2016).Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer.IEEE TRANSACTIONS ON ELECTRON DEVICES,63(2). |
| MLA | Zhang, ZL,et al."Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer".IEEE TRANSACTIONS ON ELECTRON DEVICES 63.2(2016). |
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