Fabrication of 45 nm high In component metamorphic In(0.7)Ga0.3As/In0.6Ga(0.4)As composite-channel high electron-mobility transistors on GaAs substrates
文献类型：期刊论文
| 作者 | Kang, WH; Zhang, XD; Ji, X; Cai, Y(蔡勇); Zhou, JH; Xu, WJ; Li, Q; Xiao, GL; Zhang, BS(张宝顺); Li, H |
| 刊名 | ELECTRONICS LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 52期号:4 |
| 通讯作者 | Kang, WH |
| 英文摘要 | A 45 nm high In component metamorphic In0.7Ga0.3As/In0.6Ga0.4As composite-channel high electron-mobility transistor (mHEMT) on GaAs substrate with good DC and RF performance has been developed. The structure was grown by molecular beam epitaxy and exhibits a superior electron mobility of 10200 cm(2)/(V.s) and a sheet density of 3.5 x 1012 cm(-2) at a room temperature. A combined optical and e-beam lithography technology was used to achieve the nanometre mHEMT device. The mHEMT device shows an extrinsic transconductance of up to 990 mS/mm and a maximum current density of 910 mA/mm. The unity current gain cutoff frequency f(T) and the maximum oscillation frequency f(max) are 187.94 and 258.62 GHz, respectively. These performances make the device well suited for millimetre-wave applications. |
| 关键词[WOS] | GATE ; HEMTS |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000369863000035 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4826]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 |
| 推荐引用方式 GB/T 7714 | Kang, WH,Zhang, XD,Ji, X,et al. Fabrication of 45 nm high In component metamorphic In(0.7)Ga0.3As/In0.6Ga(0.4)As composite-channel high electron-mobility transistors on GaAs substrates[J]. ELECTRONICS LETTERS,2016,52(4). |
| APA | Kang, WH.,Zhang, XD.,Ji, X.,Cai, Y.,Zhou, JH.,...&Li, H.(2016).Fabrication of 45 nm high In component metamorphic In(0.7)Ga0.3As/In0.6Ga(0.4)As composite-channel high electron-mobility transistors on GaAs substrates.ELECTRONICS LETTERS,52(4). |
| MLA | Kang, WH,et al."Fabrication of 45 nm high In component metamorphic In(0.7)Ga0.3As/In0.6Ga(0.4)As composite-channel high electron-mobility transistors on GaAs substrates".ELECTRONICS LETTERS 52.4(2016). |
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