中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Compatibility of AlN/SiNxpassivation technique with high-temperature process

文献类型:期刊论文

作者Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai(付凯); Cai, Yong(蔡勇); Zhang, Baoshun(张宝顺); Chen, Kevin J.
刊名CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology
出版日期2016
收录类别EI
语种英语
源URL[http://ir.sinano.ac.cn/handle/332007/4853]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队
推荐引用方式
GB/T 7714
Hua, Mengyuan,Lu, Yunyou,Liu, Shenghou,et al. Compatibility of AlN/SiNxpassivation technique with high-temperature process[J]. CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology,2016.
APA Hua, Mengyuan.,Lu, Yunyou.,Liu, Shenghou.,Liu, Cheng.,Fu, Kai.,...&Chen, Kevin J..(2016).Compatibility of AlN/SiNxpassivation technique with high-temperature process.CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology.
MLA Hua, Mengyuan,et al."Compatibility of AlN/SiNxpassivation technique with high-temperature process".CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology (2016).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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