Compatibility of AlN/SiNxpassivation technique with high-temperature process
文献类型:期刊论文
作者 | Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai(付凯); Cai, Yong(蔡勇); Zhang, Baoshun(张宝顺); Chen, Kevin J. |
刊名 | CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology
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出版日期 | 2016 |
收录类别 | EI |
语种 | 英语 |
源URL | [http://ir.sinano.ac.cn/handle/332007/4853] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_张宝顺团队 |
推荐引用方式 GB/T 7714 | Hua, Mengyuan,Lu, Yunyou,Liu, Shenghou,et al. Compatibility of AlN/SiNxpassivation technique with high-temperature process[J]. CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology,2016. |
APA | Hua, Mengyuan.,Lu, Yunyou.,Liu, Shenghou.,Liu, Cheng.,Fu, Kai.,...&Chen, Kevin J..(2016).Compatibility of AlN/SiNxpassivation technique with high-temperature process.CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology. |
MLA | Hua, Mengyuan,et al."Compatibility of AlN/SiNxpassivation technique with high-temperature process".CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology (2016). |
入库方式: OAI收割
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