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High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
文献类型：期刊论文
| 作者 | Wang, JL; Yao, Q; Huang, CW; Zou, XM; Liao, L; Chen, SS; Fan, ZY; Zhang, K(张凯); Wu, W; Xiao, XH |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2016 |
| 卷号 | 28期号:37 |
| 通讯作者 | Liao, L |
| 英文摘要 | High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance. |
| 关键词[WOS] | FIELD-EFFECT TRANSISTORS ; MOLYBDENUM-DISULFIDE ; MONOLAYER MOS2 ; GRAPHENE ; HETEROSTRUCTURE ; TRANSPORT ; DEFECT |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000386103600028 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4679]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米研究国际实验室_张凯团队 |
| 推荐引用方式 GB/T 7714 | Wang, JL,Yao, Q,Huang, CW,et al. High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer[J]. ADVANCED MATERIALS,2016,28(37). |
| APA | Wang, JL.,Yao, Q.,Huang, CW.,Zou, XM.,Liao, L.,...&Wu, WW.(2016).High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer.ADVANCED MATERIALS,28(37). |
| MLA | Wang, JL,et al."High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer".ADVANCED MATERIALS 28.37(2016). |
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