中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors

文献类型:期刊论文

作者Gu, JT(顾健婷); Han, J(韩洁); Liu, D; Yu, XQ(余小芹); Kang, LX(康黎星); Qiu, S(邱松); Jin, HH(金赫华); Li, HB(李红波); Li, QW(李清文); Zhang, J
刊名SMALL
出版日期2016
卷号12期号:36
通讯作者Qiu, S(邱松) ; Li, QW(李清文)
关键词[WOS]WALLED CARBON NANOTUBES ; FIELD-EFFECT TRANSISTORS ; LARGE-DIAMETER ; SELECTIVE DISPERSION ; PREFERENTIAL GROWTH ; INTEGRATED-CIRCUITS ; CONJUGATED POLYMERS ; LOW-COST ; DENSITY ; EXTRACTION
收录类别SCI ; EI
语种英语
WOS记录号WOS:000384684500010
源URL[http://ir.sinano.ac.cn/handle/332007/4875]  
专题苏州纳米技术与纳米仿生研究所_先进材料研究部_李清文团队
推荐引用方式
GB/T 7714
Gu, JT,Han, J,Liu, D,et al. Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors[J]. SMALL,2016,12(36).
APA Gu, JT.,Han, J.,Liu, D.,Yu, XQ.,Kang, LX.,...&Zhang, J.(2016).Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.SMALL,12(36).
MLA Gu, JT,et al."Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors".SMALL 12.36(2016).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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