中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconducting single-walled carbon nanotubes as interfacial modification layers for organic-Si solar cells

文献类型:期刊论文

作者Duan, XL; Han, J; Xia, ZH; Song, T; Li, QW(李清文); Li, HB(李红波); Sun, BQ
刊名ORGANIC ELECTRONICS
出版日期2016
卷号28
通讯作者Sun, BQ
英文摘要A semiconducting single-walled carbon nanotubes (s-SWCNTs) interlayer between poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n-Si was used for high performance organic-Si hybrid photoVoltaic (PV) devices. The s-SWCNTs films with different thickness were utilized to investigate the PV effect on PEDOT:PSS/Si device performance. The surface potential of Si substrate with s-SWCNTs was dramatically reduced, which increased the compatibility between Si and PEDOT:PSS. In addition, s-SWCNTs with good semiconducting properties, guaranteed the charge transfer between Si and PEDOT:PSS. Therein, the electrical contact was dramatically improved with addition of s-SWCNTs interlayer, which led to increased fill factor. A power conversion efficiency (PCE) of 12.14% was achieved with an optimized thickness of s-SWCNTs layer. The s-SWCNTs interface layer was fabricated by a simple solution processed method, which was easily coupled with organic-Si solar cells to enhance the PCE. (C) 2015 Elsevier B.V. All rights reserved.
关键词[WOS]SILICON NANOWIRES ; EFFICIENCY
收录类别SCI ; EI
语种英语
WOS记录号WOS:000367775300030
源URL[http://ir.sinano.ac.cn/handle/332007/4891]  
专题苏州纳米技术与纳米仿生研究所_先进材料研究部_李清文团队
推荐引用方式
GB/T 7714
Duan, XL,Han, J,Xia, ZH,et al. Semiconducting single-walled carbon nanotubes as interfacial modification layers for organic-Si solar cells[J]. ORGANIC ELECTRONICS,2016,28.
APA Duan, XL.,Han, J.,Xia, ZH.,Song, T.,Li, QW.,...&Sun, BQ.(2016).Semiconducting single-walled carbon nanotubes as interfacial modification layers for organic-Si solar cells.ORGANIC ELECTRONICS,28.
MLA Duan, XL,et al."Semiconducting single-walled carbon nanotubes as interfacial modification layers for organic-Si solar cells".ORGANIC ELECTRONICS 28(2016).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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