Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits
文献类型：期刊论文
| 作者 | Chen, BY; Zhang, PP; Ding, L; Han, J; Qiu, S(邱松); Li, QW(李清文); Zhang, ZY; Peng, LM |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 16期号:8 |
| 通讯作者 | Zhang, ZY ; Peng, LM |
| 英文摘要 | Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V. |
| 关键词[WOS] | THIN-FILM TRANSISTORS ; ATOMIC LAYER DEPOSITION ; HIGH-PERFORMANCE ; ELECTRONICS ; NETWORKS ; VARIABILITY ; JUNCTION ; DEVICES ; DESIGN ; ARRAYS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000381331900055 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4923]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_先进材料研究部_李清文团队 |
| 推荐引用方式 GB/T 7714 | Chen, BY,Zhang, PP,Ding, L,et al. Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits[J]. NANO LETTERS,2016,16(8). |
| APA | Chen, BY.,Zhang, PP.,Ding, L.,Han, J.,Qiu, S.,...&Peng, LM.(2016).Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.NANO LETTERS,16(8). |
| MLA | Chen, BY,et al."Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits".NANO LETTERS 16.8(2016). |
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