Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant
文献类型：期刊论文
| 作者 | Zhang, MR(张淼荣); Qin, SJ(秦双娇); Peng, HD(彭红丹); Pan, GB(潘革波) |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 182 |
| 通讯作者 | Pan, GB(潘革波) |
| 英文摘要 | Here we report an environment-friendly approach to fabricate porous GaN photoelectrode using ionic liquid as the etchant. SEM images revealed photo-assisted electrochemical etching (PECE) has better etching effect than electrochemical etching (ECE). Furthermore, Raman spectra demonstrated porous GaN obtained by PECE has better lattice integrity than that obtained by ECE. The photocurrent of porous GaN prepared by PECE is six times and two times of planar and porous GaN fabricated by ECE, respectively. Above results indicated porous GaN obtained by PECE can be a promising photoelectrode for optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved. |
| 关键词[WOS] | GALLIUM NITRIDE ; ELECTRODEPOSITION ; ARRAYS |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000382338400089 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/4558]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队 |
| 推荐引用方式 GB/T 7714 | Zhang, MR,Qin, SJ,Peng, HD,et al. Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant[J]. MATERIALS LETTERS,2016,182. |
| APA | Zhang, MR,Qin, SJ,Peng, HD,&Pan, GB.(2016).Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant.MATERIALS LETTERS,182. |
| MLA | Zhang, MR,et al."Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant".MATERIALS LETTERS 182(2016). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。