Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
文献类型：期刊论文
| 作者 | Zhou, Guangdong1; Sun, Bai1,2; Yao, Yanqing1; Zhang, Huihui1; Zhou, Ankun3,4; Alameh, Kamal5; Ding, Baofu1,5; Song, Qunliang1,5,6 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2016-10-03 |
| 卷号 | 109期号:14 |
| 英文摘要 | MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of similar to 240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of similar to 10(2) for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour. Published by AIP Publishing. |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | DATA-STORAGE ; HYSTERESIS ; MECHANISM ; DEVICES ; FILMS ; NANODEVICES ; CHARGES ; MATRIX |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000386152800074 |
| 源URL | [http://ir.kib.ac.cn/handle/151853/33757]  |
| 专题 | 昆明植物研究所_植物化学与西部植物资源持续利用国家重点实验室 |
| 作者单位 | 1.Southwest Univ, Inst Clean Energy & Adv Mat ICEAM, Chongqing 400715, Peoples R China 2.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong 999077, Hong Kong, Peoples R China 3.Chinese Acad Sci, Kunming Inst Bot, Kunming 650201, Peoples R China 4.Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China 5.Edith Cowan Univ, Electron Sci Res Inst, 270 Joondalup Dr, Joondalup, WA 6027, Australia 6.Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Guangdong,Sun, Bai,Yao, Yanqing,et al. Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires[J]. APPLIED PHYSICS LETTERS,2016,109(14). |
| APA | Zhou, Guangdong.,Sun, Bai.,Yao, Yanqing.,Zhang, Huihui.,Zhou, Ankun.,...&Song, Qunliang.(2016).Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires.APPLIED PHYSICS LETTERS,109(14). |
| MLA | Zhou, Guangdong,et al."Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires".APPLIED PHYSICS LETTERS 109.14(2016). |
入库方式： OAI收割
来源：昆明植物研究所
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