High-temperature hydrogenation behaviour of bulk titanium silicon carbide
文献类型：期刊论文
| 作者 | Chen, C.1; Li, F. -Z.1; Xu, C. -H.1; Zhang, H. -B.1; Peng, S. -M.1; Zhang, G. -J.2 |
| 刊名 | ADVANCES IN APPLIED CERAMICS
 |
| 出版日期 | 2016 |
| 卷号 | 115期号:5页码:288-293 |
| 关键词 | Ti3SiC2 Hydrogenation Thermal stability |
| 英文摘要 | Thermal stability of Ti3SiC2 was investigated at 1200-1400 degrees C in hydrogen atmosphere for 3 hours. The hydrogenation mechanism was clarified by a combination of X-ray diffraction, scanning electron microscope, Raman spectroscopy and first principles calculation. At 1200 degrees C, a dense and uniform TiSi2 layer formed on the sample surface, which originated from both the preferable lose of silicon from the Ti3SiC2 substrate and the dissociation of Ti3SiC2. As temperature increased to 1300 degrees C, TiSi2 layer began to scale off and presented laminated Ti3SiC2 grains beneath this layer, which indicated preferential hydrogenation occurred along the basal planes. This phenomenon was ascribed to the fact that the introduction of H interstitial atom weakened the combination between titanium and silicon interface layer, which was confirmed by first principles calculations. In addition, the formation of TiSi2 owing to the dissociation of Ti3SiC2 caused the volume expansion after hydrogenation, resulting in that majority of TiSi2 layer spelled off at 1400 degrees C. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Materials Science, Ceramics |
| 研究领域[WOS] | Materials Science |
| 关键词[WOS] | HYDROTHERMAL TREATMENT ; COMBUSTION SYNTHESIS ; M(N+1)AX(N) PHASES ; TI3SIC2 ; CARBON ; OXIDATION ; STABILITY ; RAMAN ; AIR ; COMPOSITES |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000377182100007 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/22990]  |
| 专题 | 上海硅酸盐研究所_高性能陶瓷和超微结构国家重点实验室_期刊论文 |
| 作者单位 | 1.China Acad Engn Phys, Inst Nucl Phys & Chem, Innovat Res Team Adv Ceram, Mianyang 621900, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, C.,Li, F. -Z.,Xu, C. -H.,et al. High-temperature hydrogenation behaviour of bulk titanium silicon carbide[J]. ADVANCES IN APPLIED CERAMICS,2016,115(5):288-293. |
| APA | Chen, C.,Li, F. -Z.,Xu, C. -H.,Zhang, H. -B.,Peng, S. -M.,&Zhang, G. -J..(2016).High-temperature hydrogenation behaviour of bulk titanium silicon carbide.ADVANCES IN APPLIED CERAMICS,115(5),288-293. |
| MLA | Chen, C.,et al."High-temperature hydrogenation behaviour of bulk titanium silicon carbide".ADVANCES IN APPLIED CERAMICS 115.5(2016):288-293. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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