Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate
文献类型：期刊论文
| 作者 | Zhou, Huaijuan1,2; Li, Jinhua1,2; Xin, Yunchuan1,2; Sun, Guangyao1,2; Bao, Shanhu1; Jin, Ping1,3 |
| 刊名 | CERAMICS INTERNATIONAL
 |
| 出版日期 | 2016-05-01 |
| 卷号 | 42期号:6页码:7655-7663 |
| 关键词 | Grain size Electrical properties Transition metal oxides Epitaxial film |
| 英文摘要 | High-quality VO2 thin films were epitaxially deposited on MgF2 (111) single crystal substrate by means of magnetron sputtering process. The epitaxial relation of VO2 film and MgF2 (111) substrate was denoted as (210)VO2(M)//(111) MgF2 or (111) VO2(R)//(111) MgF2, which was determined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical contrast between the semiconductor phase and metallic phase in the infrared region exceeds 40%, which holds great potential applications in optical switching. The energy-saving effect of VO2 films as the intelligent coating of smart window, which is commonly supposed to be one of the typical employments of optical switching performance, can be optimized by regulating the grain size of VO2 films. The resistance-temperature curves were measured by a specially customized resistance testing platform and corresponding thermochromic parameters, such as transition temperature, SMT width, activation energy, et al., were evaluated. The largest resistance ratio between the two phases exceeds 5 orders of magnitude, which can function as excellent electrical switching and may find its applications in a variety of novel switching devices. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Materials Science, Ceramics |
| 研究领域[WOS] | Materials Science |
| 关键词[WOS] | METAL-INSULATOR-TRANSITION ; VANADIUM DIOXIDE ; PHASE-TRANSITION ; SURFACE ; TEMPERATURE ; MEMORY ; MULTILAYER ; DRIVEN ; GROWTH ; SPEED |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000372676000135 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23015]  |
| 专题 | 上海硅酸盐研究所_古陶瓷与工业陶瓷工程研究中心_期刊论文 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Natl Inst Adv Ind Sci & Technol, Mat Res Inst Sustainable Dev, Nagoya, Aichi 4638560, Japan |
| 推荐引用方式 GB/T 7714 | Zhou, Huaijuan,Li, Jinhua,Xin, Yunchuan,et al. Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate[J]. CERAMICS INTERNATIONAL,2016,42(6):7655-7663. |
| APA | Zhou, Huaijuan,Li, Jinhua,Xin, Yunchuan,Sun, Guangyao,Bao, Shanhu,&Jin, Ping.(2016).Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate.CERAMICS INTERNATIONAL,42(6),7655-7663. |
| MLA | Zhou, Huaijuan,et al."Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate".CERAMICS INTERNATIONAL 42.6(2016):7655-7663. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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